|
个人信息Personal Information
副教授
硕士生导师
教师拼音名称：Suzijia
电子邮箱：
所在单位：集成电路创新学院
性别：男
学位：博士学位
在职信息：在职
毕业院校：中国科学技术大学
- [1] Z. J. Su, C. R. Xue, Z. Y. Geng, Z. P. Zhou, Y. Li, Z. X. Wang, Y. Liu, Y. D. Xie, L.-Q. Tao, Y. Yang, T.-L. Ren; Crosstalk-free dual-mode pain sensor for pain perception, Chemical Engineering Journal, 2026, 546: 179826.；
- [2] Z. J. Su, L. W. Liang, Z. F. Xie, Y. Yang, L. Q. Tao, and T. L. Ren, “Spider silk-inspired environmentally adaptive intelligent graphene artificial throat,” Chemical Engineering Journal, vol. 511, Mar. 30, 2025. (第一作者，SCI1区 Top，IF 13.2);
- [3] Z. J. Su, Y. Yan, M. R. Sun, Z. H. Xuan, H. X. Cheng, D. Y. Luo, Z. X. Gao, C. J. Zuo, and H. D. Sun, “Broadband artificial tetrachromatic synaptic devices composed of 2D/3D integrated WSe₂-GaN-based dual-channel floating gate transistors,” Advanced Functional Materials, vol. 34, Apr. 4, 2024. (第一作者，SCI1区 Top，IF 19.4);
- [4] Z. J. Su, H. X. Cheng, X. Y. Sun, H. D. Sun, and C. J. Zuo, “High-performance floating gate heterostructure with WSe₂-MoS₂ diode channel for neural synapse,” IEEE Electron Device Letters, vol. 44, May 22, 2023. (第一作者，SCI2区，IF 4.5);
- [5] Z. J. Su, Z. H. Xuan, J. Liu, Y. Kang, C.-S. Liu, and C.-J. Zuo, “Sub-femto-Joule energy consumption memory device based on van der Waals heterostructure for in-memory computing,” Chip, vol. 1, Jun. 28, 2022. (第一作者，JCR Q1，IF 7.1);
- [6] Z. J. Su, Y. Ying, X. X. Song, Z. Z. Zhang, Q. H. Zhang, G. Cao, H. O. Li, G. C. Guo, and G. P. Guo, “Tunable parametric amplification of a graphene nanomechanical resonator in the nonlinear regime,” Nanotechnology, vol. 32, Jan. 25, 2021. (第一作者，SCI4区 Top，IF 2.8);
- [7] Z. Su, Y. Yan, H. Sun, and C. Zuo, “5-bit high-linearity UV-stimulated synaptic device based on MoS₂/GaN heterostructure,” in Proc. IEEE Electron Devices Technology and Manufacturing Conf. (EDTM), Mar. 9–12, 2025. (第一作者，EI，IEEE国际会议);
- [8] Z. Su, L. Tao, L. Liang, Z. Xie, Y. Yang, and T. Ren, “Flexible and skin-compatible rGO/PVDF composite sensor for multi-functional on-skin applications,” in Proc. IEEE Electron Devices Technology and Manufacturing Conf. (EDTM), Mar. 9–12, 2025. (第一作者，EI，IEEE国际会议);
| |